DEVICE - A three-dimensional mixed-mode device/circuit simulator

				Michael Schroter
   		Dresden University of Technology, Dresden Germany
			       mschroter@ieee.org

 DEVICE is a program for numerical mixed-mode device/circuit simulation
of one-, two-, or three-dimensional semiconductor device structures based on
silicon or silicon-germanium material. The program solves the following 
partial differential equations:
- Poisson's equation 
- electron and hole continuity equations
- a single combined equation consisting of Poisson's and the majority continuity 
  equation for simulating electrical coupling in lossy substrates.
DEVICE's transport equations are presently based on a drift-diffusion approach 
which so far has proved to be suited well enough even for advanced bipolar
transistors, such as SiGe devices, with transit frequencies up to 75 to 100 GHz. 
Circuit simulation is based on the modified nodal approach. DEVICE also serves 
as development tool for the advanced compact model HICUM and as reference 
simulator for verification of HICUM implementation in commercial simulators.
The program offers the following features:
1. d.c., time domain, and small-signal frequency domain analysis
2. Physical effects: 
   - volume recombination (SRH and Auger)
   - surface and interface recombination
   - doping, field, and temperature dependent carrier mobilities including
     difference between mobility for majority and minority carriers
   - temperature dependent carrier drift velocity saturation
   - finite recombination velocity for minorities at ohmic contacts
   - Schottky contacts
   - heavy doping effects modelled by using the effective intrinsic carrier
     density and Boltzmann statistics
   - alloy dependent models for SiGe
   - fixed oxide volume charge
   - simple oxide isolated gate boundary condition.
3. Box integration method with automatic grid generation
4. A variety of linear equation system solvers: LU factorization, SOR, SLOR,
   SIP, BiCGSTAB.
5. Circuit analysis with external circuit elements, such as
    - resistors, capacitors
    - diodes
    - transistor compact models (SPICE Gummel-Poon model, HICUM).
6. Postprocessor for numerical devices of bipolar transistors and 
   pn-diodes for calculating
   - sheet resistances anywhere in a structure;
   - charges, capacitances,storage and transit times in the various 
     metallurgical regions of a structure;
   - transit frequency; 
   - small-signal two-port parameters (Y, Z, H, S).
 DEVICE programming started in 1987 at the Ruhr-University Bochum based on
experience with more specialized predecessor programs. The program has been
used at various institutions and companies such as Ruhr-University Bochum 
(Germany), Purdue University (USA), National Research Council (Canada), 
Carleton University (Canada), Conexant Systems (USA), STMicroelectronics 
(France).

Documentation: Manual (softcopy in preparation)