Professur Elektronische Bauelemente und Integrierte Schaltungen | |||||||||||||||||||||||||||||||||||||||||||||||||
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Modeling and Characterization of Electron Devices | ||||||||||||||||||||||||||||||||||||||||||||||||
| Lecture | Location | Day | Start | Time | Duration |
| Lecture | BAR/218/U | Thursday | 11.04.2013 | 5.DL | 1DL |
Audience: 10/MA/NES
Objective of the module (2/2/2):
The module emphasizes current research topics and trends in the area of modeling and characterization of micro- and nanoelectronic devices. Students acquire expertise on:
| Date | Contents |
| 11.04.2013 | Organisation, overview of topics |
| 18.04.2013 | MOS transistor modeling |
| 25.04.2013 | Carbon Nano Tubes and FETs |
| 16.05.2013 | SiGe HBT compact modeling |
| 30.05.2013 | Electrothermal modeling |
| 06.06.2013 | Algorithmic benchmark circuit design |
| 13.06.2013 | Statistical modeling |
| 20.06.2013 | Parameter extraction basics |
| 27.06.2013 | Parameter extraction HICUM |
| 04.07.2013 | On-Wafer S-parameter measurements |
| 11.07.2013 | Noise in SiGe and AIIIBV bipolar transistors |
| 18.07.2013 | Large-signal, Distortion and measurements |
Assessment:
Grading of this course requires the successful completion of a project on a topic selected during the course period. The topic may include device simulation, modeling and parameterextraction, or a literature study on novel devices. The grading will be based on the submittedproject documentation.
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