Dr.-Ing. Martin Claus

Post- addresse:	Technische Universität Dresden Fakultät Elektrotechnik Institut für Grundlagen der Elektrotechnik und Elektronik D-01062 Dresden, Germany
Besucher- addresse:	Barkhausenbau, Zimmer 262 Helmholtzstraße 18 01069 Dresden
Telefon:	+49 351 463 33053
Fax:	+49 351 463 37260
E-mail:	Martin.Claustu-dresden.de
Research focuses:	Modeling and Simulation of Nanoscale Transistors Physical Compact Modeling of CNT Transistors Methods for the Analysis of Analog Networks, Network Theory
Publications: Copyright Statement: IEEE and other publishers generally own the copyright to all material included below that is published by them. Personal use of this material is permitted. However, permission to use this material for any other purposes must be obtained from the publisher.	[26] M. Schröter, M. Claus, P. Sakalas, M. Haferlach, D. Wang "Nanotube FET Technology for Radio-Frequency Electronics: State-of-the-Art Overview", IEEE Journal of the electron devices society, vol. 1, no. 1, 2013. [25] P. Sakalas, M. Claus, S. Müller, M. Schroter, "Carrier transport behavior of carbon nanotube transistors with single semiconducting and metallic tubes", AVS 59th International Symposium & Exhibition, Tampa (FL) 2012. [24] M. Claus, S. Blawid, S. Mothes, M. Schröter, "High-frequency ballistic transport phenomena in Schottky-barrier CNTFETs", IEEE Trans. on Electron Devices, Vol. 59, Num. 10, pp. 2610-2618, 2012. [23] M. Schroter, M. Claus, P. Sakalas, D. Wang, M. Haferlach, "An overview on the state-of-the-art of Carbon-based radio-frequency electronics", IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCMT), pp. 112-119, Oct., 2012. [22] M. Claus, S. Blawid, M. Schröter, "Analysis of the frequency dependent gate capacitance in CNTFETs", IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 336-339, Sept., 2012. [21] S. Blawid, M. Claus, M. Schröter, "Phenomenological modeling of charge injection - Beyond the Schottky barrier paradigm", 27th Symposium on Microelectronics Technology and Devices (SBmicro), ECS Transactions, Vol. 49, pp. 85-92, 2012. [20] M. Claus, M. Haferlach, D. Gross, M. Schroter, "Critical review of CNTFET compact models",Nanotech, Workshop on Compact Modeling (WCM), Vol. 2, pp. 770 - 775, June, 2012. [19] P. Sakalas, M. Claus, M. Schroter, A. Rumiantsev, "Experimental characterization of temperature-dependent electron transport in single-wall multi-tube carbon nano-tube transistors", Phys. Status Solidi RLL, Vol. 6, Num. 2, pp. 62-64, 2012. [18] F. Ellinger, M. Claus, M. Schröter, C. Carta, "Review of Advanced and Beyond CMOS FET Technologies for Radio Frequency Circuit Design", IEEE International Microwave and Optoelectronics Conference (IMOC), Natal, Brazil, pp. 347-351, 2011. [17] J. Pliva, C. Carta, M. Claus, M. Schröter, F. Ellinger, "On the Design of Active Downconversion Mixers for Wireless Communications on a Carbon Nanotube FET Technology", IEEE International Microwave and Optoelectronics Conference (IMOC), Natal, Brazil, pp. 984-988, 2011. [16] M. Claus, "Modeling of ballistic Carbon Nanotube Transistors for Analog High-Frequency Applications", PhD thesis, TUDpress, ISBN 978-3942710237, 2011. [15] P. Sakalas, M. Schroter, M. Bölter, M. Claus, S. Mothes, D. Wand, "High Frequency Noise in Manufacturable Carbon Nanotube Transistors", 21st International Conference on Noise and Fluctuations (ICNF), Toronto, Canada, 2011. [14] M. Claus, S. Mothes, M. Schröter, "Modeling of NQS Effects in Carbon Nanotube Transistors", IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Bologna, Italy, pp. 203-206, 2010. [13] Y. Nakaya, T. Nishi, S. Oishi, M. Claus, "Numerical Existence Proof of Five Solutions for Certain Two-Transistor Circuit Equations", Japan J. Indust. Appl. Math., Vol. 26, Num. 2, pp. 327 - 336, 2009. [12] M. Claus, M. Schröter, "Design study of CNT transistor layouts for analog circuits", Nanotech, Workshop on Compact Modeling (WCM), Houston, USA, Vol. 3, pp. 566 - 569, 2009. [11] M. Claus, S. Mothes, M. Schröter, "A numerical device simulator for nanoscale carbon nanotube transistors", IEEE Semiconductor Conference Dresden, Dresden, Germany, A3-3, 2009. [10] T. Coym, M. Claus, "Implementation of DC-Fault Diagnosis Networks in Standard Circuit Simulators", Proceedings of ANALOG'08, Siegen, Germany, pp. 69 - 73, 2008. [9] M. Claus, G. Wedel, M. Schröter, "Advanced Device Simulation and Modeling", 7th European HICUM Workshop, Dresden, Germany, 2007. [8] G. Wedel, M. Claus, M. Schröter, "Modeling of non-isothermal effects in DEVICE", 7th European HICUM Workshop, Dresden, Germany, 2007. [7] A. Reibiger, M. Claus ,"Kennlinienmethoden zur Arbeitspunktberechnung resistiver Netzwerke und zur DC-Fehlerdiagnose", Kleinheubacher Tagung,Sept. 2006. [6] Y. Nakaya, S. Oishi, T. Nishi, M. Claus,"Numerical Verification of Five Solutions in Two-transistor Circuits",NOLTA2006, International Symposium on Nonlinear Theory and Applications,pp. 307 - 310, Sept. 2006. [5] M. Claus, T. Coym, B. Straube, A. Reibiger,"Kennlinienmethode zur DC-Fehlerdiagnose integrierter Analogschaltungen",Proceedings of ANALOG' 06,pp. 51 - 56, Sept. 2006. [4] M. Claus, T. Coym, B. Straube, A. Reibiger,"A Network Theoretical Approach to Analog DC-Fault Diagnosis",12th International Mixed_Signals Testing Workshop,pp. 28 - 32, 2006. [3] M. Claus, “Geometrical Analysis of Two-Transistor Circuits with More than Three Operating Points“, ECCTD ‘05 - European Conference on Circuit Theory and Design, Cork, Ireland, pp. III47 - III50, 2005. [2] M. Claus, T. Nähring, A. Reibiger, "Kennlinienmethoden zur Berechnung der Arbeitspunkte nichtlinearer resistiver Netzwerke", Proceedings of ANALOG'05, Hannover, Germany, pp. 121 - 128, 2005. [1] M. Claus, "Verfahren zur Analyse nichtlineaer resistiver Netzwerke", Diploma thesis (in German), Technische Universität Dresden, 2004.
Other CNTFET related publications from our group:	[4] Schröter, M., Kolev, P., Wang, D., Lin, S., Samarakone, N., Bronikowski, M., Yu, Z., Sampat, P., Syams, P. and McKernan, S., "A 4'' Wafer Photostepper-Based Carbon Nanotube FET Technology for RF Applications", IEEE MTT-S International Microwave Symposium, 2011. [3] Eron, M., Lin, S., Wang, D., Schroter, M. and Kempf, P., "GHz amplifiers go nano", Electronics Letters, Vol. 47, No. 4, pp. 227, 2011. [2] Eron, M., Lin, S., Wang, D., Schroter, M. and Kempf, P., "An L-band carbon nanotube transistor amplifier", Electronics Letters, Vol. 47, No. 4, pp. 265-266, 2011. [1] Schroter, M., Mothes, S., Wang, D., McKernan, S., Samarakone, N., Bronikowski, M., Yu, Z. and Kempf, P., "A 0.4um CNTFET technology for RF applications", Proc. Governm. Microcircuit Applic. & Critical Technol. Conf. (GomacTech), 2011.
Supervised diploma theses:	[12] S. Mothes, "Semiklassische Modellierung und Analyse des elektrischen Verhaltens von Carbon Nanotube Transistoren ", Diplomarbeit, 2012, Technische Universität Dresden [11] D. Gross, "Compact modeling and device optimization of CNTFETs", Diplomarbeit, 2012, Technische Universität Dresden [10] S. Mothes, "Implementierung einer Monte-Carlo-Methode zur Lösung der Boltzmanntransportgleichung", Studienarbeit, 2012, Technische Universität Dresden [9] M. Haferlach, "Simulation Studies for Multitube and Multifinger Carbon Nanotube Transistors", Diplomarbeit, 2011, Technische Universität Dresden [8] L. Zhongyin, "Einfluss technologischer Parameter auf das Verhalten von CNTFETs", Studienarbeit, 2010, Technische Universität Dresden [7] M. Bölter, "Evaluation of CNTFET Technologies for mmWave Applications", Diplomarbeit, 2010, Technische Universität Dresden [6] A. Petr, "Layout-Optimierung von PG-CNTFETs zur Verbesserung des DC- und HF-Verhaltens in Leistungsverstärkern", Diplomarbeit, 2009, Technische Universität Dresden, [5] M. Haferlach, "Modelling of Carbon Nanotube Transistors for Circuit Design and Simulation", Studienarbeit, 2009, Technische Universität Dresden [4] T. Nardmann, "Vergleich von Modellerweiterungen zur Berücksichtigung von Quantisierungseffekten in MOS Transistoren", Studienarbeit, 2008, Technische Universität Dresden [3] G. Wedel, "Einfluß der Ladungstransportmodellierung auf das Verhalten moderner SiGe HBTs", Diplomarbeit, 2008, Technische Universität Dresden [2] A. Petr, "Analysis of Carbon Nanotube Compact Models", Studienarbeit, 2008, Technische Universität Dresden [1] G. Wedel, "Modellierung nichtisothermer Effekte mit DEVICE", Studienarbeit, 2006, Technische Universität Dresden
L.Hofmann 01. Juni 2011