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Publications Prof. Dr.-Ing. habil. M. Schröter
Copyright Statement:
IEEE and other publishers generally own the copyright to all material included below that is published by the them.
Personal use of this material is permitted. However, permission to use this material for any other purposes must be obtained from the publisher
(e.g. from IEEE by sending an email to pubs-permissions@ieee.org)
Books
M. Schröter, A. Chakravorty
"COMPACT HIERARCHICAL BIPOLAR TRANSISTOR MODELING WITH HICUM"
1. Journal and conference papers
| [114] |
M. Schröter, S. Chaudhry, J. Zheng, A. Mukherjee, A. Pawlak, S. Lehmann
"SiGe HBT compact modeling for production-type circuit design"
IEEE 12th Topical Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 pp 129-132
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| [113] |
M. Schröter, M. Claus, P. Sakalas, D. Wang, M. Haferlach
"An overview on the state-of-the-art of Carbon-based radio-frequency electronics"
IEEE, BCTM 8.1, pp 112-119
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| [112] |
M. Schröter, G. Wedel, C. Jungemann, J. Krause, B. Heinemann, P. Chevalier, A. Chantre
"Physical and electrical limits of high-performance SiGeC HBTs - Part I: vertical scaling"
IEEE, to be published
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| [111] |
M. Schröter, J. Krause, G. Wedel, N. Rinaldi, B. Heinemann, P. Chevalier, A. Chantre
"Physical and electrical limits of high-performance SiGe HBTs - Part II: lateral scaling"
IEEE, to be published
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| Supporting Information |
| [110] |
T. Nardmann, S. Lehmann, M. Schröter, R. Driad
"Application of HICUM/L0 to InP DHBTs using single-transistor parameter extraction"
International Conference on InP and Related Materials (IPRM 2011)May 22-26, 2011, Berlin, Germany
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| [109] |
M. Eron, S. Lin, D. Wang, M. Schröter and P. Kempf
"L-band carbon nanotube transistor amplifer"
ELECTRONICS LETTERS 17th February 2011 Vol.47 No.4
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| [108] |
M. Schröter, P. Kolev, D. Wang, M. Eron, S. Lin, N. Samarakone, M. Bronikowski, Z. Yu, P. Sampat
"A 4” Wafer Photostepper-Based Carbon Nanotube FET Technology for RF Applications"
978-1-61284-757-3/11/$26.00 C2011 IEEE
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| [107] |
S. Lehmann, M. Weiss, Y. Zimmermann, A. Pawlak, K. Aufinger, M. Schröter
"Scalable Compact Modeling for SiGe HBTs suitable for Microwave Radar Applications"
IEEE SiRF, Phoenix (AZ), 2011.pp. 113-116
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| [106] |
M. Claus, S. Mothes, M. Schröter
"Modeling of NQS effects in carbon nanotube transistors"
Proc. SISPAD, 2010, 203-206
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| [105] |
J. M. López-González, P. Sakalas, M.Schröter
"Analytical modelling of 200GHz SiGe HBT high-frequency noise parameters"
Semicond. Sci. Technol. 25 (2010) 105011 (10pp)
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| [104] |
A. Shimukovitch, P. Sakalas, P. Zampardi, M. Schröter and A. Matulionis
"Investigation of electron delay in the base on noise performance in InGaP heterojunction bipolar transistors"
Phys. Status Solidi RRL 4, No. 11, 335–337 (2010) / DOI 10.1002/pssr.201004340
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| [103] |
J. Jacob, A. DasGupta, M. Schröter, A. Chakravorty
"Modeling Nonquasi-Static Effects in SiGe HBTs"
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL.57, NO.7, JULY2010, pp. 1559-1566
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| [102] |
S. Decoutere, S. Van Huylenbroeck, B. Heinemann, A. Fox, P. Chevalier, A. Chantre, T. Meister, K. Aufinger, M. Schröter
"Pushing the speed limits of SiGe:C HBTs up to 0.5 Terahertz"
IEEE 2009 Custom Intergrated Circuits Conference (CICC)12-1-2 - 12-1-8
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| [101] |
J. M. Lopez-Gonzalez, M. Schröter
"Study of emitter width effects on βF, ƒT and ƒmax of 200 GHz SiGe HBTs by DD, HD and EB device simulation"
Semicond. Sci. Technol. 24 (2009) 115005 (7pp)
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| [100] |
A. Shimukovitch, P. Sakalas, M. Ramonas, M. Schröter, C. Jungemann, W.Kraus
"Investigation of SiGe Heterojunction Bipolar Transistor over an Extreme Temperature Range"
Noise and Fluctuations, 20th International Conference (ICNF 2009), pp. 309-312
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| [99] |
P. Sakalas, M. Schröter, H. Xing, D. Jena, J. Simon, J. Liberis, A. Shimukovich, A. Matulionis,
"Investigation of high frequency noise and power in AlGaN/GaN HEMTs"
Proc. 9th Int.Conf. Noise and Fluctuations, Tokyo, Japan, Vol. 922, (ed. M. Tacano, Y. Yamamoto, M.Nakao, Melville, New York), pp. 171-174, 2007.
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| [98] |
A. Bazigos, M. Bucher, P. Sakalas, M. Schröter, W. Kraus,
"High-frequency scalable compact modelling of Si RF-CMOS technology"
Proc. Int. Conf. on Micro- and Nanotechnolo-gy, Athens, 2007.
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| [97] |
M. Ramonas, C. Jungemann, P. Sakalas, M. Schröter, W. Kraus,
"Microscopic modeling of impact-ionization noise in SiGe heterojunction bipolar transistors"
Proc. SPIE Noise andFluctuations in Circuits, Devices, and Materials, ed. by M. Macucci, L. Vandamme, C. Ciofi,M. Weissman, Vol. 6600 (Bellingham, WA), 12 pages, 2007.
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| [96] |
M. Ramonas, P. Sakalas, C. Jungemann, M. Schröter,W. Kraus, A. Shimukovitch,
"Microscopic Modeling of High Frequency Noise in SiGe HBTs"
in Proc. ESSDERC, Munich, pp.183-186, 2007.
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| [95] |
M. Schröter, S. Lehmann, D. Celi,
"Non-standard geometry scaling effects in high-frequencySiGe bipolar transistors"
Proc. WCM, International NanoTech Meeting, Santa Clara, pp.603-608 , 2007.
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| [94] |
W. Schneider, M. Schröter, W. Kraus, H. Wittkopf,
"Statistical simulation of high-frequencybipolar circuits"
Proc. DATE07, Nice, pp. 1397-1402, 2007.
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| [93] |
M. Schröter, S. Lehmann
"The rectangular bipolar transistor tetrode structure and its appli-cation"
Proc. ICMTS, Tokyo, Japan, pp. 206-209, 2007
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| [92] |
H.Geissler, A.Rumiantsev, S.Schott, P.Sakalas, M.Schröter,
"A Novel Probe Station for He-lium Temperature Measurements"
CDR of the 68th ARTFG Microwave Measurement Con-ference, Measurement for Emerging Technologies, pp.67-73, 2006.
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| [91] |
H.-J. Wassener, H.-J. Strobel, D. Eichel, W. Schneider, M. Schröter, H. Wittkopf,
"Statistical Simulation: Use of a TRADICA based Statistical Design Kit in the Cadence Environment"
GMM Fachbericht "Analog ’06", Vol. 196, VDE Verlag, Dresden, pp. 233-236, 2006.
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| [90] |
P.Sakalas, A.Chakravorty, M.Schröter, M.Ramonas, J.Herricht, A.Shimukovitch, C.Jungemann,
"Modeling of High Frequency Noise in SiGe HBTs"
Proc. SISPAD, Monterey,CA, pp. 271-274, 2006.
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| [89] |
P.Sakalas, J.Herricht, A.Chakravorty, M.Schröter,
"Compact Modeling of High Frequency Correlated Noise in HBTs"
Proc. Bipolar Circuits and Technology Meeting (BCTM), Maas-tricht (Belgium), pp. 279-282, 2006.
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| [88] |
J. Herricht, P. Sakalas, A. Chakravorty, M. Schröter,
"Transistor-Kompaktmodell mit korrelierten Rauschquellenfür sehr hohe Frequenzen"
GMM Fachbericht "Analog ’06", Vol.196, VDE Verlag, Dresden, pp. 143-148, 2006.
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| [87] |
M. Schröter, H. Tran,
"Charge-storage related parameter calculation for Si and SiGe bipolar transistors from device simulation"
Proc. WCM, International NanoTech Meeting, Bos-ton (MA), pp. 735-740, 2006.
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| [86] |
R. M.Malladi, K. M.Newton, M. Schröter,
"Development and Design Kit Integration of a Scalable and Statistical High Current Model for Advanced SiGe HBTs"
Proc. WCM, InternationalNanoTech Meeting, Boston (MA), pp. 729-734, 2006
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| [85] |
M. Schröter and H. Tran,
"Regional Approach Methods for SiGe HBT compact modeling"
6th HICUM Workshop, Heilbronn (Germany), June 2006
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| [84] |
A. Chakravorty, S. Lehmann, M. Schröter,
"HICUM/Level0 - Update"
6th HICUM Workshop, Heilbronn (Germany), June 2006
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| [83] |
K.E. Moebus, M. Schröter,
"Device sizing and design optimization"
6th HICUM Workshop, Heilbronn (Germany), June 2006
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| [82] |
S. Lehmann, M. Schröter, J. Krause, A. Pawlak,
"Non-standard geometry scaling effects"
6th HICUM Workshop, Heilbronn (Germany), June 2006
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| [81] |
R. M. Malladi, K. M. Newton, V. Borich, S. L.Sweeney, J. Rascoe, S. Venkatadri, J. Yang,S. Chen,
"Two-Tone Distortion Modeling for SiGe HBTs Using the High-Current Model"
Proc. WCM, International NanoTech Meeting, Boston (MA), pp. 765-767, 2006.
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| [80] |
R. M. Malladi, K. M. Newton, M. Schröter, V. Borich, S. L.Sweeney, J. Rascoe, S. Venkatadri, J. Yang, S. Chen,
"Extraction of Scalable HiCuM Parameters and Verifikation for Advanced SiGeHBTs"
Proc. WCM, International NanoTech Meeting, Boston (MA), pp. 761-764, 2006.
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| [79] |
A. Chakravorty, M. Schröter, P. Sakalas, J. Herricht,
"Correlated Noise Modeling - An Implementation into HICUM"
6th HICUM Workshop, Heilbronn (Germany), June 2006
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| [78] |
A. Chakravorty, M. Schröter,
"HICUM/L2 - Productization and Release Update"
6th HICUM Workshop, Heilbronn (Germany), June 2006
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| [77] |
S. Frégonèse, S. Lehmann, T. Zimmer ,M. Schröter, D. Céli, B. Ardouin, H. Beckrich, P. Brenner, W. Kraus,
"A Computationally Efficient Physics-Based Compact Bipolar Transistor Model for Circuit Design—Part II: Parameter Extraction and Experimental Results"
IEEE Trans. Electron Dev., Vol. 53, pp. 287- 295, 2006
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| [76] |
M. Schröter, S. Lehmann,S. Frégonèse, T. Zimmer,
"A Computationally Efficient Physics-Based Compact Bipolar Transistor Modelfor Circuit Design—Part I: Model Formulation"
IEEE Trans. Electron Dev., Vol. 53, pp. 279-286, 2006
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| [75] |
M. Schröter
"High-frequency circuit design oriented compact bipolar transistor modeling with HICUM"
(inv. paper), IEICE Transactions on Electronics, Special Issue on Analog Circuit and Device Technologies, Vol. E88-C, No. 6, pp. 1098-1113, 2005.
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| [74] |
M. Schröter, H. Wittkopf, W. Kraus,
"Statistical modeling of bipolar transistors"
Proc. Bi-polar Circuits and Technology Meeting (BCTM), Santa Barbara (CA), pp. 54-61, 2005
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| [73] |
P. Sakalas, M. Schröter, P. Zampardi,
"Investigation of Shot Noise Reduction in InGaP HBTs with different Base Thickness"
18th Inernational Conference on Noise and Fluctuations, Salamanca (Spain), pp., 2005
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| [72] |
J. Herricht, P.Sakalas, M. Schröter, P.Zampardi, Y. Zimmermann, F. Korndörfer, A. Simukovic,
"Verification of
p
-Equivalent Circuit based Microwave Noise Model on AIII BV HBTs with Emphasis HICUM",
International Microwave Symposium, Long Beach (CA), pp., 2005
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| [71] |
M. Schröter, P. Sakalas, H. Tran,
“Modeling of distortion in bipolar transistors - A review”,
(inv. paper), Proc. 5th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Atlanta (GA),
pp. , 2004.
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| [70] |
M. Malorny, M. Schröter, D. Berger, D. Celi,
“Analytical method for calculating elements of an arbitrary equivalent circuit”,
Proc. MIXDES, Poland,
pp. 79-84, 2004.
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| [69] |
P. Sakalas, M. Schröter, P. Zampardi, M. Racanelli,
“Microwave noise in III-V and SiGe-based HBTs: comparison, trends, numbers“,
(inv. paper), Proc. SPIE 18th Int. Conf. on Noise and Fluctuations, Canary Islands (Spain),
pp. 151-163, 2004.
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| [68] |
P. Sakalas, M. Schröter, R. Scholz, H. Jiang, M. Racanelli,
“Analysis of microwave noise sources in 150GHz SiGe HBTs”,
Tech. Dig. RFIC Symp., Fort-Worth (TX),
pp. 291-294, 2004.
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| [67] |
M. Schröter, H. Tran, W. Kraus,
“Germanium profile design options for LEC-SiGe HBTs”,
Solid-State Electronics,
Vol. 48, pp. 1133-1146, 2004.
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| [66] |
M. Schröter, H. Tran,
„Modeling of charge and collector field in Si-based bipolar transistors“,
inv. paper at the Workshop on Compact Modeling, International NanoTech Meeting, Boston (MA),
pp. 102-107, 2004.
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| [65] |
Y. Zimmermann, M. Schröter, P. Zampardi, A. Klimashov, G. Tkachenko,
"III-V HBT Modeling, scaling and parameter extraction using TRADICA and HICUM",
IEEE Workshop on Power Amplifiers, San Diego, CA,
2003.
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| [64] |
M. Schröter, P. Sakalas, W. Kraus, L. Kornau, J. Herricht,
“Modeling of LEC Si/SiGe power transistors with HICUM”,
IEEE Workshop on Power Amplifiers, San Diego, CA,
IEEE Workshop on Power Amplifiers, San Diego, CA,
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| [63] |
M. Malorny, M. Schröter, D. Celi, D. Berger,
“An improved method for determining the transit time of Si/SiGe bipolar transistors”,
Proc. BCTM,
pp. 229-232, 2003.
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| [62] |
P. Sakalas, M. Schröter, W. Kraus, and L. Kornau,
“Modeling of SiGe power HBT intermodulation distortion using HICUM”,
Proc. ESSDERC, Lisboa (Portugal),
pp. 311-314, 2003.
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| [61] |
P.Sakalas and M. Schröter,
“Analysis of the Microwave Noise Sources in HEMTs, MOSFETs and HBTs”,
17th Int. Conf. on Noise and Fluctuations, Prague,
pp. 247-250, 2003.
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| [60] |
P. Sakalas, M. Schröter, P. Zampardi, H. Zirath,
“Shot noise reduction in AlGaAs/GaAs and InP/GaAs based HBTs”,
Proc. SPIE Fluctuations and Noise, Santa Fe (NM), eds. J.Deen et al.,
pp. 387-396, 2003.
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| [59] |
R. Wittmann, J. Hartung, W. Tränkle, H.-J. Wassener, and M. Schröter,
“RF Design Technology for Highly Integrated Communication Systems”,
DATE 2003, Munich,
pp. 742-747, 2003.
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| [58] |
M. Schröter,
„Compact bipolar transistor modeling - Issues and possible solutions“,
invited paper at Workshop on Compact Modeling, Proc. International NanoTech Meeting, San Francisco (CA),
pp. 282-285, 2003.
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| [57] |
M. Schröter, H. Jiang, S. Lehmann and S. Komarow,
“HICUM/Level0 - a simplified compact bipolar transistor model”,
IEEE BCTM, Monterey (CA),
pp. 112-115, 2002.
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| [56] |
D. Berger, D. Celi, M. Schröter, M. Malorny, T. Zimmer, and B. Ardouin,
“HICUM parameter extraction flow for a single transistor geometry”,
IEEE BCTM, Monterey (CA),
pp. 116-119, 2002.
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| [55] |
P.Sakalas, H. Zirath, A. Litwin, and M. Schröter,
“Microwave noise modeling of 0.18mm gate length MOSFETs with 60GHz cut-off frequency”,
ESSDERC, Bologna (Italy),
pp. 619-622, 2002.
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| [54] |
P.Sakalas, M. Schröter, P. Zampardi, H. Zirath, and R. Welser,
“Microwave Noise Sources in AlGaAs/GaAs HBTs”,
IEEE International Microwave Symposium, Seattle (WA),
pp. 2117-2120, 2002.
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| [53] |
M. Schröter,
“Staying current with HICUM”,
IEEE Circuits and Devices Magazine,
Vol. 18, No. 3, pp. 16-25, 2002.
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| [52] |
P.Sakalas, H. Zirath, A. Litwin, M. Schröter, and A. Matulionis,
“Impact of pad and gate parasitic elements on small-signal and noise modeling of 0.35mm gate length MOSFETS”,
IEEE Trans. Electron Dev.,
Vol. 49, No. 5, pp. 871-880, 2002.
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| [51] |
M. Schröter, J. Berntgen, W. Kraus, H.-J. Wassener, and H.-J. Strobel,
“Scalable HICUM model for SiGe HBTs”,
ECOMPASS Workshop,
Bonn (Germany), 2002.
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| [50] |
D.J. Walkey, T.J. Smy, C. Reimer, M. Schröter, H. Tran, D. Marchesan, M. Jackson, and T. Kleckner,
“Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow”,
Solid-State Electronics,
Vol. 46, No. 1, pp. 7-17, 2002.
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| [49] |
P.Sakalas, H. Zirath, A. Litwin, and M. Schröter,
“On-Wafer Low-Frequency Noise Investigation of the 0.35um n and p Type MOSFETs, Dependence upon the Gate Geometry”,
Proc. International Conference on Noise in Physical Systems and 1/f Noise (ICNF), Gainesville, (FL),
pp. 157-160, 2001.
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| [48] |
T.-Y. Lee, M. Schröter and M. Racanelli,
“A scalable model generation methodology for bipolar transistors for RF IC design“,
IEEE Bipolar and BiCMOS Circuits and Technology Meeting, Minneapolis,
pp. 171-174, 2001.
|
| [47] |
P.Sakalas, H. Zirath, A. Litwin, M. Schröter, and A. Matulionis,
“Size dependent influence of the pad and gate parasitic elements on the microwave and noise
performance of 0.35mm n- and p-type MOSFETS”,
Proc. 31st European Microwave Conf., CMP Europe Ltd.,
pp. 29-32, 2001.
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| [46] |
M. Schröter, T.-Y. Lee and M. Racanelli,
“RF Bipolar IC Design using a scalable model generation methodology”,
IEEE Workshop on Power Amplifiers,
San Diego, CA, 2001.
|
| [45] |
D.J. Walkey, T.J. Smy, D. Marchesan, H. Tran, M. Schröter,
„A scalable thermal model for trench-isolated bipolar devices”,
Solid-State Electronics,
Vol. 44, No. 8, pp. 1373-1380, 2000.
|
| [44] |
M. Schröter, D.R. Pehlke and T.-Y. Lee,
„Compact modeling of high-frequency distortion in Si integrated bipolar transistors“,
IEEE Trans. on Electron Dev.,
Vol. 47, pp. 1529-1539, 2000
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| [43] |
S.H. Jen, C. Enz, D.R. Pehlke, M. Schröter, B.J. Sheu,
„A high-frequency MOS transistor model and its effects on radio-frequency and circuits“,
J. of Analog ICs & Signal Processing, (Kluwer),
Vol. 23, pp. 93-101, 2000.
|
| [42] |
H.-M. Jen, C. Enz, D.R. Pehlke, M. Schröter and B.J. Sheu,
„Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz“,
IEEE Trans. Electron Dev.
Vol. 46, pp. 2217-2227, 1999.
|
| [41] |
D.J. Walkey, T.J. Smy, D. Marchesan, H. Tran, C. Reimer,
T.C. Kleckner, M.K. Jackson, M. Schröter and J.R. Long,
„Extraction and modeling of thermal behavior in trench isolated bipolar structures“,
IEEE Bipolar and BiCMOS Circuits and Technology Meeting, Minneapolis,
pp. 97-100, 1999.
|
| [40] |
M. Schröter, H.-M. Rein, W. Rabe, R. Reimann, H.-J. Wassener and A. Koldehoff,
„Physics- and process-based bipolar transistor modeling for integrated circuit design“,
IEEE Journal of Solid-State Circuits,
Vol. 34 , pp. 1136-1149, 1999.
|
| [39] |
M. Schröter, D.R. Pehlke and T.-Y. Lee,
„Compact modeling of high-frequency distortion in bipolar transistors“,
Proc. ESSDERC, Leuven,
pp. 476-479, 1999.
|
| [38] |
M. Schröter and T.-Y. Lee,
„A physics-based minority charge and transit time model for bipolar transistors“,
IEEE Trans. Electron Dev.,
vol. 46, pp. 288-300, 1999.
Link to the armenian translation.
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| [37] |
M.J. Deen, S.L. Rumyantsev and M. Schröter,
„On the origin of 1/f noise in polysilicon emitter bipolar transistors“,
J. Appl. Phys.,
Vol. 85, No. 2, pp. 1192-1195, 1999.
|
| [36] |
X.Y. Chen, M.J. Deen, A.D. van Rheenen, Z.X. Yan, and M. Schröter,
„Low-frequency noise in npn and pnp double-polysilicon BJTs, effects of temperature and emitter dimensions“,
Proc. IEDMS,
1998.
|
| [35] |
C.H. Chen, M.J. Deen, Z.X. Yan, M. Schröter and C. Enz,
„High frequency noise of MOSFETs. II-Experiments“,
Solid-State Electronics, Vol. 42, No. 11,
pp. 2083-2092, 1998.
|
| [34] |
M. Schröter, Z. Yan, T.-Y Lee and W. Shi,
„A compact tunneling current and collector breakdown model“,
Proc. IEEE Bipolar Circuits and Technology Meeting, Minneapolis,
pp. 203-206, 1998.
|
| [33] |
Y. Cheng, M. Schröter, C. Enz, M. Matloubian and D. Pehlke,
„RF modeling issues of deep-submicron MOSFETs for circuit design“,
Proc. IEEE Int’l Conf. on Solid-State Integr. Circuit Technol. (inv. paper), Bejing,
pp. 416-419, 1998.
|
| [32] |
D.R. Pehlke, M. Schröter, A. Burstein, M. Matloubian, M.F. Chang,
„High-Frequency application of MOS compact models and their development for scalable RF model libraries“,
IEEE Custom Integrated Circuits Conference,
pp. 219-222, 1998.
|
| [31] |
S.H. Jen, C. Enz, D.R. Pehlke, M. Schröter, B.J. Sheu,
„Accurate MOS transistor Modeling and parameter extraction up to 10 GHz",
Proc. ESSDERC’98,
p. 484-487, 1998.
|
| [30] |
X.Y. Chen, M.J. Deen, Z.X. Yan and M. Schröter,
„Effects of emitter dimensions on low-frequency noise in double-polysilicon BJTs“,
Electronics Letters,
Vol. 34, No. 2, pp. 219-220, 1998.
|
| [29] |
D.J. Walkey, T.J. Smy, H. Tran, D. Marchesan, M. Schröter,
„Prediction of thermal resistance in trench isolated bipolar device structures“,
Proc. IEEE Bipolar and BiCMOS Circuits and Technology Meeting, Minneapolis 12.3,
pp. 207-208, 1998.
|
| [28] |
M. Schröter and D.J. Walkey,
„Physical modeling of lateral scaling in bipolar transistors“,
IEEE J. Solid-State Circuits,
Vol. 31, pp. 1484-1491, 1996 and Vol. 33, p. 171, 1998.
|
| [27] |
S. Voinigescu, M. Maliepaard, M. Schröter, P. Schvan and D. Harame,
„A scaleable high-frequency noise model for bipolar transistors and its applications in low-noise amplifier design“,
IEEE J. Solid-State Circuits,
Vol. 32, pp. 1430-1439, 1997.
|
| [26] |
H.Q. Tran, M. Schröter, D.J. Walkey, D. Marchesan and T.J. Smy,
„Simultaneous extraction of thermal and emitter series resistances in bipolar transistors“,
Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis,
pp. 170-173, 1997.
|
| [25] |
C. McAndrew, J.A. Seitchik, D.F. Bowers, M. Dunn, M. Foisy, I. Getreu, M. McSwain, S. Moinian, J. Parker,
D.J. Roulston, M. Schröter, P. v.Wijnen and L.F. Wagner,
„VBIC95, the vertical bipolar intercompany model“,
IEEE J. Solid-State Circuits,
Vol. 31, pp. 1476-1483, 1996.
|
| [24] |
S. Voinigescu, M. Maliepaard, M. Schröter, P. Schvan and D. Harame,
„A scaleable high-frequency noise model for bipolar transistors and its application to optimal transistor sizing for low-noise amplifier design“,
Proc. IEEE Bipolar and BiCMOS Circuits and Technology Meeting, Minneapolis,
pp. 61-64, 1996.
|
| [23] |
M.A. Alam, M. Schröter and M.S. Lundstrom,
„Influence of quasi-ballistic base transport on the small-signal y-parameters of Si bipolar transistors“,
IEEE Electron Dev. Lett.,
Vol. 17, Nr. 4, pp. 184-186, 1996.
|
| [22] |
D.J. Walkey, M. Schröter, and S. Voinigescu,
„Predictive modeling of lateral scaling of bipolar transistors“,
Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Minneapolis,
pp. 74-77, 1995.
|
| [21] |
M. Schröter and D.J. Walkey,
„Scaling considerations of bipolar transistors using 3D device simulation“,
Proc. SISDEP,
pp. 210-213, Sept. 1995.
|
| [20] |
M. Schröter and H.-M. Rein,
„Investigation of very fast and high-current transients in digital bipolar circuits by using a new compact model and a device simulator“,
IEEE J. Solid-State Circuits,
Vol. 30, pp. 551-562, 1995.
|
| [19] |
M. Schröter, M. Friedrich, and H.-M. Rein,
„A generalized Integral Charge-Control Relation and its application to compact models for silicon based HBT's“,
IEEE Trans. Electron Dev.,
Vol. 40, pp. 2036-2046,1993.
|
| [18] |
M. Schröter,
„A survey of present compact models for high-speed bipolar transistors“,
FREQUENZ,
Vol. 47, pp. 178-190, 1993.
|
| [17] |
A. Koldehoff, M. Schröter, and H.-M. Rein,
„A compact bipolar transistor model for very high-frequency applications with special regard to narrow stripes and high current densities“,
Solid-State Electronics,
Vol. 36, pp. 1035-1048, 1993.
|
| [16] |
M. Schröter,
„Modeling of the low-frequency base resistance of single base contact bipolar transistors“,
IEEE Trans. Electron Dev.,
Vol. 39, pp. 1966-1968, 1992.
|
| [15] |
M. Schröter,
„Compact bipolar transistor models for simulation of high-speed silicon circuits - A survey“,
invited presentation at the ITG meeting, Schwäbisch Hall (Germany)
March 1992.
|
| [14] |
H.-M. Rein, M. Schröter, A. Koldehoff, and K. Wörner,
„A semi-physical bipolar transistor model for the design of very high-frequency analog ICs“,
Proc. IEEE Bipolar and BiCMOS Circuits and Technology Meeting, Minneapolis,
pp. 217-220, 1992.
|
| [13] |
A. Koldehoff, H.-M. Rein and M. Schröter,
„A semi-physical compact model for the simulation of very high-speed bipolar ICs with very small emitter stripes“,
ITG meeting, Schwäbisch Hall (Germany),
March 1992.
|
| [12] |
M. Schröter,
„Transient and small-signal high-frequency simulation of numerical device models embedded in an external circuit“,
COMPEL,
Vol. 10, No. 4, pp. 377-378, 1991.
|
| [11] |
M. Schröter,
„DEVICE - A mixed/mode device-circuit simulator for DC, transient, and small-signal (hf) operation“,
Proc. NASECODE VII, Copper Mountain (USA),
pp. 193-195, 1991.
|
| [10] |
M. Schröter,
„Simulation and modeling of the low-frequency base resistance of bipolar transistors in dependence on current and geometry“,
IEEE Trans. Electron Dev.,
Vol. 38, pp. 538-544, 1991.
|
| [9] |
H.-M. Rein and M. Schröter,
„Experimental determination of the internal base sheet resistance of bipolar transistors under forward-bias conditions“,
Solid-State Electron.,
Vol. 34, pp. 301-308, 1991.
|
| [8] |
M. Schröter and H.-M. Rein,
„Transit time of high-speed bipolar transistors in dependence on operating point, technological parameters, and temperature“,
Proc. IEEE Bipolar Circuits and Technology Meeting, Minneapolis,
pp. 85-88, 1989.
|
| [7] |
H.-M. Rein and M. Schröter,
„Base spreading resistance of square emitter transistors and its dependence on current crowding“,
IEEE Trans. Electron Dev.,
Vol. 36, pp. 770-773, 1989.
|
| [6] |
M. Schröter,
„Physical compact models for high-speed bipolar transistors with special regard to high current densities“
invited talk at the ITG meeting, Schwäbisch Hall (Germany),
Nov. 1988.
|
| [5] |
H.-M. Rein, M. Schröter and H. Stübing,
„Reply to comments on ’A compact physical large-signal model for high-speed bipolar transistors at high current densities - Part. I:
One-dimensional model’“,
IEEE Trans. Electron Dev.,
Vol. 35, pp. 1996-1997, 1988.
|
| [4] |
H.-M. Rein and M. Schröter,
„A compact physical large-signal model for high-speed bipolar transistors at high current densities - Part II:
Two-dimensional model and experimental results“,
IEEE Trans. Electron Dev.,
Vol. 34, pp. 1752-1761, 1987.
|
| [3] |
M. Schröter and H.-M. Rein,
„A compact physical large-signal model for high-speed bipolar transistors including the high-current region“,
NTG meeting, Würzburg, Mai 1986.
|
| [2] |
H.-M. Rein, H. Stübing, and M. Schröter,
„Verification of the Integral Charge-Control Relation for high-speed bipolar transistors at high current densities“,
IEEE Trans. Electron Dev.,
Vol. 32, pp. 1070-1076, 1985.
|
| [1] |
M. Schröter and H.-M. Rein,
„Two-dimensional modelling of high-speed bipolar transistors at high current densities using the Integral Charge-Control Relation relation",
Proc. ESSDERC '84; see also: Physica B, North Holland Phys. Publ. Div.,
pp. 332-336, 1985.
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2. Short Courses and Tutorials (invited)
| [6] |
M. Schröter,
“Modeling of SiGe bipolar transistors”,
invited tutorial at the Modeling Workshop of the Fabless Semiconductor Association (FSA), Santa Clara (CA),
Oct. 2004.
|
| [5] |
M. Schröter,
“Compact bipolar transistor modeling - Issues and possible solutions”,
invited talk at the Compact Modeling Workshop of the International NanoTech Meeting, San Francisco (CA),
Feb. 2003.
|
| [4] |
M. Schröter,
„Compact device modeling for RF circuit design“,
invited tutorial at the IEEE International Electron Devices Meeting (IEDM), San Francisco (CA),
Dec. 2002.
|
| [3] |
M. Schröter,
“Overview on the HICUM bipolar transistor model”,
invited tutorial at the Modeling Workshop of the Fabless Semiconductor Association (FSA), San Jose (CA),
Sept. 2002.
|
| [2] |
M. Schröter,
“Modeling of high-speed bipolar transistors”
invited tutorial at the Modeling Workshop of the Fabless Semiconductor Association (FSA), San Jose (CA),
Sept. 2002.
|
| [1] |
M. Schröter,
“The advanced compact bipolar transistor model HICUM”,
invited tutorial at the ANALOG 2002 in Bremen (Germany),
May 2002.
|
3. Book Chapters
| [2] |
M. Schröter, Chapters
“Advanced compact bipolar transistor models - HICUM” and
“Generalized Integral Charge-Control Relation”
in “The SiGe Handbook”, ed. by J. Cressler, to appear in
2005.
|
| [1] |
M. Schröter,
“Junction Diodes and Bipolar Junction Transistors”,
Chapter 2 in “The Electrical Engineering Handbook”, ed. Wai-Kai Chen, Academic Press/Elsevier Science,
2003.
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