Professur Elektronische Bauelemente und Integrierte Schaltungen

TU Dresden »  Fakultät Elektrotechnik und Informationstechnik » Institut für Grundlagen der Elektrotechnik und Elektronik  English
 
 Home 
 Aktuelles 
 Forschung 
 Lehre 
 Mitarbeiter 
 Tagungen 
 Stellenangebote  
 Publikationen
  

Publications Dr.rer.nat. P. Sakalas

Copyright Statement:

IEEE and other publishers generally own the copyright to all material included below that is published by the them. Personal use of this material is permitted. However, permission to use this material for any other purposes must be obtained from the publisher (e.g. from IEEE by sending an email to pubs-permissions@ieee.org)

[137] W. Liang, A. Mukherjee, P. Sakalas, A. Pawlak, M. Schröter "96 GHz 4.7 mW low-power frequency tripler with 0.5 V supply voltage" Electronics Letters, August 2017, the Institution of Engineering and Technology (the IET) DOI: 10.1049/el.2017.2523
[136] T. Nardmann, M. Schröter, P. Sakalas "A multiregion approach to modeling the base-collector junction capacitance" IEEE transactions on electron devices, Piscataway : IEEE. ISSN 0018-9383, 2016, Vol. 63, iss.9, p. 3808-3811, DOI: 10.1109/TED.2016.2593466
[135] M. Haferlach, A. Pacheco, P. Sakalas, M. Alexandru, S. Hermann, T. Nardmann, M. Schröter, M. Claus "Electrical characterization of emerging transistor technologies: issues and challenges" IEEE transactions on nanotechnology, ISSN 1536-125X, 2016, Vol. 15, no. 4, p. 619-626. DOI: 10.1109/TNANO.2016.2564925
[134] P. Sakalas, K. Yau, M. Schröter "High frequency noise and harmonic distortion of 28 nm n and p type MOSFETs" Noise and fluctuations: 24rd international conference (ICNF) : IEEE proceedings, 20-23 June 2017, Vilnius, Lithuania. New York : IEEE, 2017. ISBN 9781509027613. p. 1-4. DOI: 10.1109/ICNF.2017.7985983
[133] P. Sakalas, M. Zhang, M. Schröter, G. Yujing "Noise parameters of GaAs pHEMTs at K, V and W bands: Measurement peculiarities and modeling" Noise and fluctuations: 24rd international conference (ICNF) : IEEE proceedings, 20-23 June 2017, Vilnius, Lithuania. New York : IEEE, 2017. ISBN 9781509027613. p. 1-4. DOI: 10.1109/ICNF.2017.7986007
[132] P. Sakalas, T. Nardmann, A. Šimukovic, M. Schröter, H. Zirath "Microwave noise analysis in InP and GaAs HBTs" Compound semiconductor integrated circuit symposium (CSICS) : IEEE proceedings, 23-26 Oct. 2016, Austin, TX, USA. New York : IEEE, 2016. ISBN 9781509016082. p. 170-173. DOI: 10.1109/CSICS.2016.7751054
[131] A. Pawlak, S. Lehmann, P. Sakalas, J. Krause, M. Schröter, K. Aufinger, B. Ardouin "SiGe HBT modeling for mm-wave circuit design" 2015 IEEE Bipolar / BiCMOS Circuits and Technology Meeting : 26-28 October, 2015, Boston, MA, USA. Boston, 2015. ISBN 9781467385510., P. 149-155
[130] P. Sakalas, A. Pawlak, M. Schröter "Nonlinear distortion in mm-wave SiGe HBTs: modeling and measurements" THz-Workshop : millimeter- and sub-millimeter wave circuit design and characterization (during ESSDERC-ESSCIRC'2014) : Venice, Italy, September 26, 2014 , programme. Venice. 2014, p
[129] J. Dang, P. Sakalas, A. Noculak, M. Hinz, B. Meinerzhagen "A K-band High Gain, Low Noise Figure LNA using 0.13 µm Logic CMOS Technology" Proceedings of the 10th Microwave Integrated Circuits Conference, 978-2-87487-040-8, 2015 EuMA, Paris, September 6-11pp.120-123, 2015
[128] P. Sakalas, M. Schröter "Noise in advanced bipolar transistors at mm-wave frequencies" (Invited) Proceedings of the 23rd Int. Conf. on Noise and Fluctuations, Xian, China, June 2-5, 6 p., 2015.
[127] P. Sakalas, M. Schroter, H. Zirath "mm-Wave noise modeling in advanced SiGe and InP HBTs" Journal of Computational Electronics 14, DOI 10.1007/s10825-015-0664-6, pp.62–71, 2015
[126] M. Schröter, M. Haferlach, A. Pacheco-Sanchez, S. Mothes, P. Sakalas, and M. Claus "A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications" IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 62, NO. 1, JANUARY 2015
[125] J. Liberis, M. Ramonas, E. Šermukšnis, P. Sakalas, N. Szabo, M. Schuster, A. Wachowiak and A. Matulionis "Hot-phonon lifetime in Al0.23Ga0.77N/GaN channels" Semicond. Sci. Technol. 29 (2014) 045018 (7pp)
[124] P. Sakalas, A. Simukovič, S. Piotrowicz, O. Jardel, S. L. Delage, A. Mukherjee, A. Matulionis "Compact modelling of InAlN/GaN HEMT for low noise applications" Semiconductor Science and Technology, 29, No.9 095014,8 pp., 2014
[123] A. Antonopoulos, M. Bucher, K. Papathanasiou, N. Makris, N. Mavredakis, R. K. Sharma, P. Sakalas, M. Schröter "Modeling of high frequency noise in silicon CMOS transistors for RFIC design" International Journal of Numerical Modeling: Electronic Networks, Devices and Fields, 27pp.802-811, 2014
[122] A. Antonopoulos, M. Bucher, K. Papathanasiou, N. Makris, R. K. Sharma, P. Sakalas and M. Schröter "CMOS RF Noise, Scaling, and Compact Modeling for RFIC Design" 2013 IEEE Radio Frequency Integrated Circuits Symposiumpp. 53-56
[121] A. Antonopoulos, M. Bucher, K. Papathanasiou, N. Mavredakis, N. Makris, R. K. Sharma, P. Sakalas, M. Schröter "CMOS Small-Signal and Thermal Noise Compact Modeling at High Frequencies" IEEE Trans. on Electron Devices. vol. 60, no. 11, pp. 3726-3732, Nov. 2013
[120] M. Schröter, M. Claus, P. Sakalas, M. Haferlach, D. Wang "Nanotube FET Technology for Radio-Frequency Electronics: State-of-the-Art Overview" IEEE Journal of the electron devices society, vol. 1, no. 1, 2013
[119] J. Carls, F. Ellinger, R. Eickhoff, P. Sakalas, S. von der Mark and S. Wehrli, "Design of a C-Band CMOS Class AB Power Amplifier for an Ultra Low Supply Voltage of 1.9 V," 2007 SBMO/IEEE MTT-S International Microwave & Optoelectronics Conference (IMOC 2007), pp. 786-789, 2007.
[118] T. Nardmann, P. Sakalas, F. Chen, T. Rosenbaum, M. Schröter "A geometry scalable approach to InP HBT compact modeling for mm-wave applications" IEEE CSICS, pp., 2013
[117] T. Nardmann, M. Schröter, P. Sakalas, B. Lee "A length-scalable compact model for InP DHBTs" ISCDG, 4p., 2013
[116] T. Nardmann, P. Sakalas, M. Schröter "III-V HBT modeling with HICUM" 11th HICUM Workshop, Bordeaux, 2011
[115] M. Schröter, A. Pawlak, P. Sakalas, J. Krause, T. Nardmann "SiGeC and InP HBT compact modeling for mm-wave and THz applications" IEEE Compound Semiconductor Integrated Circuits symposium, 2011, p.4
[114] P.Sakalas, M. Schröter "Microwave noise in InP and SiGe HBTs: Modeling and Challenges" Proceedings of the 22th Int. Conf. on Noise and Fluctuations, Montpellier, June 23-29, 2013 Montpellier, France - June 24-28, 2013
[113] A. Šimukovič, A. Matulionis, J. Liberis, E. Šermuskšnis, P.Sakalas, F. Zhang, J.H. Leach, V. Avrutin, R. Ferreyra and H. Morkoç "Optimum Gate Bias of Gan Heterostructures Fets" Proceedings of 37th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2013, Warnemünde, Deutschland ed. R. Zhytnytska, P. Kotara, J. Würf, ISBN 978-3-00-041435-0, pp. 33-34, , May 26- 29, 2013
[112] M. Schröter, M. Haferlach, P. Sakalas, M. Claus "A Semi-Empirical Large-Signal Model for RF Carbon Nanotube Field-Effect Transistors" IEEE MTT IMS 2013, Proc. CDR, 2013
[111] A. Šimukovič, A. Matulionis, J. Liberis, E. Šermukšnis, P. Sakalas, F. Zhang, J.H. Leach, V. Avrutin and H. Morkoç "Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors" Semicond.Sci.Technol.28(2013)055008(5pp)
[110] P. Sakalas, M. Claus, S. Müller, M. Schröter "Carrier transport behavior of carbon nanotube transistors with single semiconducting and metallic tubes" AVS 59th International Symposium & Exhibition, Tampa (FL) 2012
[109] J. Herricht, P. Sakalas, M. Ramonas, M. Schröter, C. Jungemann, A. Mukherjee, K. E. Moebus "Systematic Compact Modeling of Correlated Noise in Bipolar Transistors" IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL.60, NO.11, NOVEMBER 2012pp. 3403-3411
[108] M. Schröter, M. Claus, P. Sakalas, D. Wang, M. Haferlach "An overview on the state-of-the-art of Carbon-based radio-frequency electronics" IEEE BCTM 8.1pp. 112-119
[107] Martin Claus, Stefan Blawid, Paulius Sakalas and Michael Schröter "Analysis of the frequency dependent gate capacitance in CNTFETs" SISPAD 2012, September 5-7, 2012, Denver, CO, USA pp. 336-339
[106] Paulius Sakalas, Martin Claus, Michael Schröter, and Andrej Rumiantsev "Experimental characterization of temperature-dependent electron transport in single-wall multi-tube carbon nanotube transistors" Phys. Status Solidi RRL 6, No. 2, 62–64 (2012) / DOI 10.1002/pssr.201105442
[105] A. Rumiantsev, P. Sakalas, N. Derrier, D. Celi, M. Schröter "Influence of Probe Tip Calibration on Measurement Accuracy of Small-Signal Parameters of Advanced BiCMOS HBTs" IEEE BCTM 11.5
[104] A. Rumiantsev, F. Pourchon, N. Derrier, P. Sakalas, D. Celi "Designing On-Wafer Calibration Standards for Advanced High-Speed BiCMOS Technology" Proceedings of the 6th European Microwave Integrated Circuits Conference
[103] P. Sakalas, M. Schröter, M. Bölter, M. Claus, S. Mothes, D. Wang "High Frequency Noise in Manufacturable Carbon Nanotube Transistors" in the proc. of 21st International Conference on Noise and Fluctuations, IEEE Conf. Proc. CD-R, softboard, Toronto, 2011, June 12 - 16, 2011, Toronto, Canada, Catalog No. CFP1192N-CDR, ISBN 978-1-4577-0191-7; Conference
[102] M. Emam, P. Sakalas, A. Kumar3, J. Ida4, D. Vanhoenacker-Janvier, J.-P. Raskin and F. Danneville "Graded Channel Concept for Improving RF Noise of an Industrial 0.15 µm SOI CMOS Technology" Proceedings of the 5th European Microwave Integrated Circuits Conferencepp. 170-173
[101] P. Sakalas, J. Herricht, M. Ramonas, M. Schröter "Noise modeling of advanced technology high speed SiGe HBTs" IEEE BCTM 9.5pp. 169-172
[100] A. Rumiantsev, P. Sakalas, F. Pourchon, P. Chevalier, N. Derrier, M. Schröter "Application of On-Wafer Calibration Techniques for Advanced High-Speed BiCMOS Technology" IEEE BCTM 6.2pp. 98-104
[99] J. M. López-González, P. Sakalas, M.Schröter "Analytical modelling of 200GHz SiGe HBT high-frequency noise parameters" Semicond. Sci. Technol. 25 (2010) 105011 (10pp)
[98] A. Shimukovitch, P. Sakalas, P. Zampardi, M. Schröter and A. Matulionis "Investigation of electron delay in the base on noise performance in InGaP heterojunction bipolar transistors" Phys. Status Solidi RRL 4, No. 11, 335–337 (2010) / DOI 10.1002/pssr.201004340
[97] M. Emam, P. Sakalas, D. Vanhoenacker-Janvier, J.-P. Raskin, T. C. Lim, F. Danneville "Thermal Noise in MOSFETs: A Two- or a Three-Parameter Noise Model?" IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL.57, NO.5, MAY 2010, pp. 1188-1191
[96] A. Shimukovitch, P. Sakalas, M. Ramonas, M. Schröter, C. Jungemann, W.Kraus "Investigation of SiGe Heterojunction Bipolar Transistor over an Extreme Temperature Range" Noise and Fluctuations, 20th International Conference (ICNF 2009), pp. 309-312
[95] M. Emam, P Sakalas, D. Vanhoenacker-Janvier, J.-P. Raskin, Tao Chuan Lim, F. Danneville "Experimental investigation of reduced rf noise in graded-channel MOSFETs" IEEE T. Electron Dev. 56(7), pp. 1516–1522 (2009)
[94] P. Sakalas, M. Ramonas, M. Schröter, C. Jungemann, A. Shimukovitch, W. Kraus "Impact Ionization Noise in SiGe HBTs: Comparison of Device and Compact Modeling With Experimental Results" in IEEE TRANSACTIONS ON ELECTRON DEVICES,VOL.56,NO.2,FEBRUARY2009, pp. 328-336
[93] S. Hauptmann, F. Ellinger, P. Sakalas, "23 GHz LNA with 1.5Vx 1 mA supply in low - fT SiGe technology" In Proc. of Microwave and Radar workshop MIKON’08, ISBN:83-906662-8-6, IEEE Catalog number: CFP 08784-CDR, Wroclaw, May 19-23, pp. 154-157, 2008.
[92] J. Carls, F. Ellinger, P. Sakalas, S. Spiegel, "Class A Power amplifier in 180 nm CMOS at C-Band with integrated DC Switch for Efficient FMCW Positioning Radar" In Proc. of Microwave and Radar workshop MIKON’08, ISBN:83-906662-8-6, IEEE Catalog number: CFP 08784-CDR, Wroclaw, May 19-23, pp.511-514, 2008.
[91] F. Ellinger, P. Sakalas, G. von Büren, L. C. Rodoni, "Design and Investigation of a Travelling Wave Amplifier in SOI CMOS with Bulk Contacts for Operation up to 40 GHz" In Proc. of Microwave and Radar workshop MIKON’08, ISBN:83-906662-8-6, IEEE Catalog number: CFP 08784-CDR, Wroclaw, May 19-23, pp.515-518, 2008.
[90] P. Sakalas, M. Ramonas, M. Schröter, A. Kittlaus, H. Geissler, C. Jungemann, A. Shimukovitch, "Modeling of SiGe HBT operation in extreme temperature environment" Abstracts of Swedish national symposium “GH2008”, Göteborg, p. 91, 5-6 March, 2008 (www.GHz2008.se)
[89] A. Bazigos, M. Bucher, P. Sakalas, M. Schröter, "High-frequency scalable compact modeling of Si RF-CMOS technology" in Proc.: of the 3rd International Conference “Micro Nano 2007”, Greece 2007.
[88] P. Sakalas, M. Schröter, H. Xing, D. Jena, J. Simon, J. Liberis, A. Shimukovich, A. Matulionis, "Investigation of high frequency noise and power in AlGaN/GaN HEMTs" in the proc. of 19th International Conference on Noise and Fluctuations- AIP Conf. Proc., Vol. 922, edited by. Munecazu Tacano, Yoshiharu Yamamoto, and Mitsuyuki Nakao, Melville, New York, 2007, . pp. 171-174 (19th International Conference on Noise and Fluctuations September 9-14, 2007, Tokyo, Japan, L.C. Catalog Card No. 2007930186, ISBN 978-0-7354-0432-8, ISSN 0094-243X,
[87] M. Ramonas, C. Jungemann, P. Sakalas, M. Schröter, W. Kraus "Microscopic modeling of impact-ionization noise in SiGe heterojunction bipolar transistors" in Noise and Fluctuations in Circuits, Devices, and Materials, edited by Massimo Macucci, Lode K. J. Vandamme, Carmine Ciofi, Michael B. Weissman, Proceedings of SPIE Vol. 6600 (SPIE, Bellingham, WA, 2007) 6600 1F
[86] M. Ramonas, P. Sakalas, C. Jungemann, M. Schröter,W. Kraus, A. Shimukovitch "Microscopic Modeling of High Frequency Noise in SiGe HBTs" in Proc. ESSDERC, Munich, 2007, pp. 183-186
[85] A.Rumiantsev, R.Doerner, P.Sakalas, "Verification of Wafer-Level Calibration Accuracy at Cryogenic Temperatures" CDR of the 68th ARTFG Microwave Measurement Conference, Measurement for Emerging Technologies,pp.137-140, 2006
[84] H.Geissler, A.Rumiantsev, S.Schott, P.Sakalas, M.Schröter, "A Novel Probe Station for Helium Temperature Measurements" CDR of the 68th ARTFG Microwave Measurement Conference, Measurement for Emerging Technologies,pp.67-73, 2006
[83] J.Herricht, P.Sakalas, A.Chakravorty, M.Schröter, "Transistor-Kompaktmodell mit korrelierten Rauschquellen für sehr hohe Frequenzen" ITG-Fachbericht ANALOG’06, 196, 27-29 September, Dresden, VDE VERLAG GMBH, Berlin und Offenbach, Deutschland, EU, ISBN 978-3-8007-2988-3, ISBN 3-8007-2988-1, Druck & Bindung: druckmuck@digital e.K., Berlin,2006
[82] P.Sakalas, A.Chakravorty, M.Schröter, M.Ramonas, J.Herricht, A.Shimukovitch, C.Jungemann, in CDR of International Conference on Simulation of Semiconductor Processes and Devices, SISPAD’06, Monterey, California, USA, 6-8 September, IEEE Catalog Number: 06TH8887 (softboard) and for CDR: 06TH8887C , ISBN 1-4244-0404-5 (softboard), for CDR 1-4244-0590-4, Library of Congress 2006924884,2006
[81] P.Sakalas, J.Herricht, A.Chakravorty, M.Schröter, "Compact Modeling of High Frequency Noise Correlated Noise in HBTs", Proc. of the 2006 Bipolar/BiCMOS Circuits and Technology Meeting, BCTM’06, Maastricht, The Netherlands, EU, edited by Suvisoft Oy Ltd., IEEE Catalog Number: 06CH37813, ISBN 1-4244-0458-4,pp.279-282, 2006
[80] P.Sakalas, J.Herricht, "High Frequency Noise Investigations in HBTs using Compact Model Approach" invited talk at IEEE MTT IMS WMC Workshop “Noise in SiGe and III_V HBTs and Circuits: Opportunities and Challenges”, CDR, San Francisco, CA, USA, June 11, 2006
[79] P.Sakalas, M.Schröter, P.Zampardi, "Investigation of shot noise reduction mechanism in InGaP with different base thickness", Proc of the 18th International Conference Noise and Fluctuations, ICNF’05, Salamancaedited by T.Gonzalez, J. Mateos, D.Pardo, 2005 American Institute of physics ISBN 0-7354-0267-1/05/$22.50, pp.303-306, 2005
[78] J.Herricht, P.Sakalas, M.Schröter, P.Zampardi, Y.Zimmermann, F.Korndörfer, A.Simukovič, "Verification of p-Equivalent Circuit based microwave Noise Model on AIIIBV HBTs with Emphasis on HICUM", IEEE MTT, International Microwave Symposium Digest (CD-R), Long Beach, CA, USA, (www.ims2005.org), June 11-17, 2005.
[77] P.Sakalas, J.Herricht, M.Schröter, "Noise Modeling and Experimental Results for BiCMOS and III-V technology", (Invited talk), in Presentation Notes of the IEEE Workshop on Compact Modeling for RF/Microwave Applications, Montreal, Delft University of Technology, Sept 15, 2004.
[76] M. Schröter, P. Sakalas, W. Kraus, L. Kornau, J. Herricht, "Modeling of LEC Si/SiGe power transistors with HICUM", IEEE Workshop on Power Amplifiers for Wireless Communications, San Diego, CA, 2003.
[75] M.Schröter, P.Sakalas, H.Tran, "Modeling of distortion in bipolar transistors - A review", in Digest. of SMIC, 5th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, September 8-10, 2004 Atlanta, Georgia, USA, pp.131-134, 2004.
[74] P.Sakalas, M.Schröter, L.Kornau, W.Kraus, J.Herricht, "Modeling of SiGe Power HBT Intermodulation Distortion using HICUM", Tätigkeitsbericht 2003 TU Dresden Fakultät Elektronik und Informationstechnik, Institut für Grundlagen der Elektrotechnik und Elektronik, pp.50-53, 2003.
[73] P.Sakalas, M.Schröter, L.Kornau, W.Kraus , "Modeling of SiGe Power HBT IM Distortion", HICUM Workshop 2003, Dresden, http://www.iee.et.tu-dresden.de/iee/eb/forsch/Models/workshop0603/workshop0603.html.
[72] P.Sakalas, M.Schröter, R.F.Scholz, H.Jiang, M.Racanelli, "Analysis of Microwave Noise sources in 150 GHz SiGe HBTs", IEEE MTT, RFIC’04 Digest of Papers, Edit. Yann Deval, 04H37536, Fort Worth, June 6-8, pp.291-294, 2004
[71] P.Sakalas, M.Schröter, P.Zampardi, M.Racanelli, "Microwave noise in III-V and SiGe based HBTs, comparison, trends, numbers", invited talk, SPIE conf. Fluctuations and Noise, Proc. of SPIE Vol.5470, Conf. 5470 Noise in Devices and Circuits II, Gran Canaria, 23-27 June, Vol.5470, ISSN 0277-786X, ISBN 0-8194-5396-X, pp.151-163, 2004
[70] P.Sakalas, M.Schröter, P.Zampardi,, H.Zirath, "Shot noise reduction in AlGaAs/GaAs and InP/GaAs based HBTs", SPIE conf. Fluctuations and Noise, Proc. of SPIE Vol.5113, Conf. 5470 Noise in Devices and Circuits I, Santa Fe, New Mexico, ed. J.Deen, Zeynep, Celik-Butler, Michael Levinshtein, ISSN 0277-786X, ISBN 0-8194-4973-3, USA, 2-4 June, pp.387-396, 2003
[69] P.Sakalas, M.Schröter, L.Kornau, W.Kraus, J.Herricht, "Modeling of SiGe Power HBT Intermodulation Distortion using HICUM", Proc. Of 33rd European solid-State Device Research Conference, ESSDERC’03, ed .J Franca, P.Freitas, ISBN 0-7803-7999-3, 16-18 September, Estoril, Portugal, pp.311-314, 2003.
[68] P.Sakalas, M.Schröter, "Analysis of the Microwave Noise sources in HEMTs, MOSFETs and HBTs", Proc of the 17th International Conference Noise and Fluctuations, ICNF’03, ed. J.Sikula, ISBN 80-239-1005-1, Prag, Chech Republik, pp.247-250, 2003.
[67] P.Sakalas, A.Litwin, H.Zirath, M.Schröter, "Microwave Noise Modeling of the 0.18mm Gate Length Mosfets with a 60 GHz cut-off frequency", Proc. Of the 32nd European Solid-State Device Reserch Conference, ESSDERC’02, Florence, Italy, (www.essderc2002.deis.unibo.it/), ed. G.Baccarani, E.Gnani, M.Rudan, ISBN 88-900847-8-2, Copyright by University of Bologna, pp.619-622, 2002.
[66] P.Sakalas, M.Schröter, P.Zampardi, H.Zirath, R.Welser, "Microwave noise sources in AlGaAs/GaAs HBTs", IEEE MTT, International Microwave Symposium Digest, Seattle, WA, USA, (www.ims2002.org), June 2-7, Vol.3, 2002.
[65] P.Sakalas, A.Mellberg, H.Zirath, N.Rorsman, E.Choumas, "RF and Microwave Noise Modeling of AlInGaAs/GaInAs/InP HFETs", Proc. of the 14th Indium Phosphide and Related Materials Conference (IPRM’02), Stockholm, Sweden,(www.congrex.com/iprm2002), May 12-16, 2002, pp.273-276, 2002.
[64] P.Sakalas, H.Zirath, A.Litwin, M.Schröter, "On-wafer Low Frequency Noise Investigation of the 0.35mm n and p type MOSFETs, Dependence upon the Gate Geometry", Noise in Physical Systems and 1/f Fluctuations, Proc. of the 16th International Conference, ed. G.Bosman, World Scientific, ISBN 981-02-4677-3, Gainesville, Florida USA, pp.157-160, 2001.
[63] P.Sakalas, H.Zirath, A.Litwin, M.Schröter, A.Matulionis, "Impact of Pad and Gate Parasitics on Small-Signal and Noise modeling of 0.35mm Gate Length MOS Transistors", IEEE Transactions on Electron Devices, Vol.49, No.5, pp.871-880, May 2002.
[62] H.Zirath, C.Fager, M.Garcia, P.Sakalas, L.Landen, A.Alping, "Analog MMICs for Millimeter-Wave Applications Based on a Commercial 0.14-mm pHEMT Technology", IEEE Transactions on Microwave Theory and Techniques, Vol.49, No.11, Nov.2001.
[61] P.Sakalas, H.Zirath, A.Litwin, M.Schröter, A.Matulionis, "Size dependent influence of the pad and gate parasitic elements to the microwave and noise performance of the 0.35mm n and p type MOSFETs", European Microwave week, Conf. Proc. “ GAAS 2001 Conference”, 24-28 September, ExCeL, London 2001, pp.295-298, 2001.
[60] P.Sakalas, H.Zirath, A.Litwin, M.Schröter, A.Matulionis, "Size dependent influence of the pad and gate parasitic elements to the microwave and noise performance of the 0.35mm n and p type MOSFETs“, European Microwave week, Conf. Proc. “ 31th European Microwave Conference", Publ. The European Microwave Association 2001, ISBN 086213 148 0, 25-27 September, ExCeL, London 2001, Vol.1, pp.29-32, 2001.
[59] J.M.Miranda, C.Fager, H.Zirath, P.Sakalas, S.Munoz, J.L.Sebastian, "Characterization of parasitics in microwave devices by comparing S and noise parameter measurements with two different on wafer calibration techniques ", Proc. of the IEEE IMTC 2001, Budapest May 21-23, IM 3191, ISBN 0-7803-6646-8, pp.530-533, 2001.
[58] P.Sakalas, M.Garcia, H.Zirath, M.Willander, "Microwave Noise in InP/InGaAs and GaAs/AlGaAs Heterojunction Bipolar Transistors", Semiconductor Science and Technology, Vol.16, pp.14-20, 2001
[57] R.Kozhuharov, P.Sakalas, H.Zirath, "Investigation of device low frequency noise in 28GHz MMIC VCO", Proc. of the 2000 IEEE/EIA International Frequency Control Symposium & Exhibition, Kansas City, Missouri, June 7-9, pp.553-556, IEEEC Catalog. No. 00CH37052; ISSN 1075-6786;Library of Congress 87-654207.
[56] J.M.Miranda, C.Fager, H Zirath, P.Sakalas, S.Munoz, J.L.Sebastian, "Influence of the Calibration Kit on the Estimation of Parasitic Effects in HEMT Devices at Microwave Frequencies", IEEE Transactions on Instrumentation and Measurements, Vol.51, No.4, pp.650-655, August 2002,
[55] P.Sakalas, H.Zirath, A.Litwin "Small-signal model and microwave noise performance of the 0.35mm n and p type MOSFETs, scaling down", European Microwave week, Conf. Proc. “ 30th European Microwave Conference”, 3-5 October, Paris 2000.
[54] H.Zirath, P.Sakalas, J.M.Miranda, "Noise performance of a ground gate wideband MMIC amplifier", European Microwave week, Conf. Proc. “GAAS 2000”, and in Conf. Proc. “ 30th European Microwave Conference”, 3-5 October Paris 2000.
[53] M.Nawaz, J.M.Miranda, P.Sakalas, S.M.Wang, M.Garcia, Q.X.Zhao, H.Zirath, M.Willander, E.Kolberg, "Process Oriented Optimization of Single Quantum Well HFETs with Single in-channel Delta Doped Layer", Semiconductor Science and Technology, No.15, pp. 728-735, 2000.
[52] A.Mellberg, M.Nawaz, J.M.Miranda, P.Sakalas, S.M.Wang, H.Zirath, "In-Channel Delta-Doped HFETs", Proc. of the fifth Swedish National symposium on Giga Hertz Electronics “GHz 2000”, 13-14 March, Göteborg, Sweden, pp.169-172, 2000.
[51] H.Zirath, P.Sakalas, J.M.Miranda, "A grounded gate MMIC-Amplifier”", Proc. of the fifth Swedish National symposium on Giga Hertz Electronics “GHz 2000”, 13-14 March, Göteborg, Sweden, pp.117-119, 2000.
[50] H.Zirath, P.Sakalas, J.M.Miranda, "A low noise 2-20GHz feedback MMIC-Amplifier", Proc. of the fifth Swedish National symposium on Giga Hertz Electronics “GHZ 2000”, 13-14 March, Göteborg, Sweden, pp.121-124, 2000.
[49] P.Sakalas, M.Nawaz, H.Zirath, "Low–frequency noise in MOCVD and MBE grown AlInAs/InGaAs/InP HFETs", Proc. of the 12th International Symposium “Indium Phosphide and Related Materials’00”, Colonial Williamsburg VA, ISBN 0-783-6320-5, pp.110-113, May 2000.
[48] J. M. Miranda, M.Nawaz, P. Sakalas, H. Zirath, J. L.Sebastián, "Microwave noise Modeling of InP based MODFETs biased for Low Power consumption", IEEE Microwave Guided Wave Letters, Vol.10, No.11, pp.469-471, November 2000.
[47] P.Sakalas, M.Nawaz, H.Zirath, "Low frequency noise in MOCVD and MBE grown AlInAs/InGaAs/InP HFETs", Semiconductor Science and Technology, No.15, PII:S0268-1242(00)10133-6, pp.799-805, 2000.
[46] H.Zirath, P.Sakalas, J.M.Miranda, "A low noise 2-20GHz feedback MMIC-Amplifier", Proc of Workshop on MMIC and Smart Antennas, 22-23 November, Aspenäs Herrgård, Lerum, Sweden, 1999 (oral present., no proc.)
[45] M.Nawaz, J.M.Miranda, P.Sakalas, S.M.Wang, M.Garcia, Q.X.Zhao, H.Zirath, M.Willander, E.Kolberg, "Process Oriented Optimization of Single Quantum Well HFETs with Single in-channel Delta Doped Layer", Proceedings of the International Semiconductor Device Research Symposium, December 1-3, Charlotesville VA, USA, pp.339-342, 1999.
[44] P.Sakalas, G.Ghibaudo, T.Skotnicki, J.A.Chroboczek, "On Possibilities of LF Noise Reduction in high Mobility Si/Ge-channel MOSFETs", ICNF 15, Proceedings of the 15th International Conference, Hong Kong, 1999.
[43] R.Katilius, J.Liberis, A.Matulionis, R.Raguotis, P.Sakalas, J.-P.Nougier, J.C.Vaissiere, L.Varani, L.Rota, "Noise and Electron Diffusion in doped n-type GaAs at Heating Electric Fields", Phys.Rev.B, V. 60, No. 16, p. 11487-11493, 1999.
[42] A.Matulionis, V.Aninkevicius, R.Katilius, J.Liberis, I.Matulioniene, R.Raguotis, P.Sakalas, M.deMurcia, J.P.Nougier, F.Pascal, J.C.Vaissiere, L.Varani, "An improved velocity fluctuation model for a doped semiconductor: a comparison to experimental data", Proceedings of the 3rd ELEN Workshop, Leuven, pp.96-101, 1998.
[41] J.Liberis, A.Matulionis, P.Sakalas, R.Šaltis, L.Dozsa, B.Szentpali, V.Van Tuyen, "Microwave noise in GaAs Planar-doped barrier diodes", Lietuvos fizikos žurnalas (Lithuanian Phys. Journal, transl. in USA) vol.38, Nr.2, pp.203-206, 1998.
[40] J.Liberis, V.Gružinskis, A.Matulionis, P.Sakalas, R.Šaltis, E.Starikovas, P.Shiktorov, B.Szentpali, "Hot-electron noise in GaAs planar-doped diodes: experiment and Monte Carlo Simulation", UFPS-10 Proc., in: Proc. of the 10th Int. Symp. on Ultrafast Phenomena in semiconductors, Vilnius, Lithuania, Aug. 31-Sept. 2, 1998 Material Science Forum, Vol. 297-298 p. 175-178, 1999,
[39] V.Gružinskis, J. Liberis, A. Matulionis, P. Sakalas, E. Starikov, P. Shiktorov, B. Szentpali, V. Van Tuyen, H. L. Hartnagel, "Competition of shot noise and hot-electron noise in GaAs planar-doped barrier diode", Appl. Phys. Lett, V. 73, No.17, pp.2488-2490, 1998.
[38] R.Katilius, J.Liberis, A.Matulionis, R.Raguotis, and P.Sakalas, "Nonlinear transport and fluctuation characteristics of doped semiconductors", in: Nonlinear Analysis: Modeling and Control, V.2, pp.35-42, 1998.
[37] A.Matulionis, V.Aninkevicius, R.Katilius, J.Liberis, I.Matulioniene and P.Sakalas, "Karštuju elektronu triukšmai InAlAs/InGaAs/InAlAs dariniuose", PFI IX Mokslines konferencijos darbai, Puslaidininkiu fizikos institutas, Vilnius 1997, pp.4-7, 1998.
[36] V.Aninkevicius, J.Liberis, I.Matulioniene, A.Matulionis, P.Sakalas, B.Henle, E.Kohn, and J.Berntgen, "Hot-electron noise in InAlAs/InGaAs/InAlAs quantum wells", in: Noise in Physical Systems and 1/f Fluctuations, Proceedings of the 14th International Conference, Leuven, Belgium, July 14-18, 1997, eds. C.Claeys and E.Simoen, World Scientific: Singapore, pp.71-74, 1997.
[35] J.Liberis, A.Matulionis, P.Sakalas, R.Šaltis, L.Dozsa, B.Szentpali, V.Van Tuyen, H.L.Hartnagel, K.Mutamba, A.Sigurdardöttir, and A.Vogt, "Microwave noise in unipolar diodes with nanometric barriers", in: Noise in Physical Systems and 1/f Fluctuations, Proceedings of the 14th International Conference, Leuven, Belgium, July 14-18, 1997, eds. C.Claeys and E.Simoen, World Scientific: Singapore, pp.67-70, 1997.
[34] A.Matulionis, V.Aninkevicius, R.Katilius, J.Liberis, I.Matulioniene, R.Raguotis, and P.Sakalas, "Effect of electron-electron collisions on fluctuations in GaAs: modelling and comparison to experimental data", Annual reports 1996, Semiconductor Physics Institute, Vilnius, pp.42-45, 1997.
[33] J.Liberis, A.Matulionis, P.Sakalas, B.Szentpali, V.VanTuyen, "Microwave Noise of GaAs planar doped barrier diodes at high bias", in: 20th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE'96), Vilnius, May, pp.62-63, 1996.
[32] V.Aninkevicius, B.Henle, E.Kohn, W.Leitch, J.Liberis, A.Matulionis, P.Sakalas, "Hot-electron noise in InGaAs - based channel", In Proc. of 20th Workshop on Compound Semiconductor Devices and Integrated Circuits, Vilnius University Press, pp.34-35, 1996
[31] V.Aninkevicius, V.Bareikis, R.Katilius, J.Liberis, I.Matulioniene, A.Matulionis, P.Sakalas, R.Šaltis, "G-X intervalley-scattering time constant for GaAs estimated from hot-electron noise spectroscopy data", Physical Review B, Vol.53, No.11, pp.6893-6895, 1996.
[30] Matulionis, V.Bareikis, R.Katilius, J.Liberis, I.Matulioniene, P.Sakalas, V.Aninkevicius, R.Šaltis, "Experiments on hot electron microwave noise in FET and HEMT channels", In Communication Book of second ELEN Workshop, Grenoble, France, N304.10p., 1995.
[29] V.Aninkevicius, V.Bareikis, R.Katilius, J.Liberis, I.Matulioniene, A.Matulionis P.Sakalas, R.Šaltis, "Intervalley transfer and impact ionization noise in GaAs", in, Proceedings of the 9th Vilnius Symposium on Ultrafast Phenomena in Semiconductors (9-UFPS), Lietuvos fizikos žurnalas vol. 35, pp. 450-452, Vilnius, 1995.
[28] V.Aninkevicius, V.Bareikis, R.Katilius, J.Liberis, I.Matulioniene, A.Matulionis, P.Sakalas, and R.Šaltis, "Hot-electron fluctuations in n-type GaAs at extremely high electric fields", in Proc. of Intern. Semiconductor Device Research Symposium (ISDRS 1995) ,Charlottesville, p.193-196, 1995.
[27] V.Aninkevicius, V.Bareikis, R.Katilius, J.Liberis, I.Matulioniene, A.Matulionis, P.Sakalas, and R.Šaltis, "Hot electron noise in GaAs at extremely high electric fields", in Noise in Physical Physical Systems and 1/f Fluctuations, proceedings of the 13th International Conference, Palanga, Lithuania, edited by V.Bareikis and R.Katilius (World Scientific, Singapore 1995), pp.173-176, 1995.
[26] V.Aninkevicius, V.Bareikis, R.Katilius, J.Liberis, I.Matulioniene, A.Matulionis, P.Sakalas, and R.Šaltis, "Noise investigation of intervalley transport in GaAs", Fourth Lithuanian-Polish Workshop on Solid State Physics and Technology, Warsaw, September 1995, Abstracts and Programme.
[25] V.Aninkevicius, V.Bareikis, R.Katilius, J.Liberis, I.Matulioniene, A.Matulionis, A.Oginskis, P.Sakalas, T.Smertina, R.Šaltis, "Intervalley fluctuations of hot electrons in n-type GaAs at extremely high electric fields", Annual Reports 1994, Semiconductor Physics Institute Vilnius, pp.58-61, 1994.
[24] V.Bareikis, J.Liberis, I.Matulioniene, A.Matulionis, A.Oginskis, P.Sakalas, R.Šaltis, "Hot electron noise temperature in n-type GaAs channel at fields over 100 kV/cm", In: Proc. 7th Vilnius Conference on Fluctuations in Physical Systems, Palanga 1994. Ed. V Palenskis, Vilnius, University Press, 6 p.,1994.
[23] V.Bareikis, J.Liberis, I.Matulioniene, A.Matulionis and P.Sakalas, "Experiments on hot electron noise in semiconductor materials for high-speed devices", IEEE Trans. Electron Devices, ED-41, pp.2050-2060, 1994.
[22] A.Matulionis, V.Bareikis, J.Liberis, I.Matulioniene, A.Oginskis, P.Sakalas, R.Šaltis, "Hot electron noise temperature in an n-type GaAs channel at fields over 100 kV/cm", In: Proc. WOCSDICE’94- Eighteen European Workshop on Compound Semiconductor Devices and Integrated Circuits, Kinsdale, Ireland, pp.71-72, 1994.
[21] V.Aninkevicius, V.Bareikis, R.Katilius, J.Liberis, A.Matulionis, P.Sakalas, "Confinement-dependent hot electron noise in AlGaAs/GaAs", Annual Reports 1993, Semiconductor Physics Institute Vilnius, pp.54-57, 1993.
[20] V.Bareikis, J.Liberis, A.Matulionis, P.Sakalas, M.Capizzi, "Effect of hydrogen on hot electron noise in short samples of GaAs", Semicond. Sci.Technology, No. 8, pp.1829-1833, 1993.
[19] V.Bareikis, M.Capizzi, A.Frova, J.Liberis, A.Matulionis, P.Sakalas, "Noise in hydrogenated GaAs", In: Proc. WOCSDICE’93 - Seventeenth European Workshop on Compound Semiconductor Devices and Intergrated Circuits, Parma, Italy, pp.105-106, 1993.
[18] V.Aninkevicius, V.Bareikis, J.Liberis, A.Matulionis, P.Sakalas, "Comparative Analysis of Microwave Noise in GaAs and AlGaAs/GaAs channels", Solid-State Electronics, vol.36, No.9, pp. 1339-1343, 1993.
[17] V.Aninkevicius, V.Bareikis, J.Liberis, A.Matulionis, P.Sakalas, "Microwave noise in doped GaAs channels", ibid., p.B-11, 1992.
[16] V.Bareikis, J.Liberis, A.Matulionis, P.Sakalas, "Hot electron noise-the unique technique to study resonant impurity levels", In: Proc. WOCSDICE’92-Sixteenth European Workshop on Compound Semiconductor Devices and Integrated Circuits, San. Rafael, Segovia, Spain, p.B-10, 1992.
[15] V.Aninkevièius, V.Bareikis, R.Katilius, J.Liberis, I.Matulionienë, A.Matulionis, P.Sakalas, R.Saltis, "Intervalley transfer and impact ionization noise in GaAs", Abstracts of Symposium on Ultrafast Phenomena in Semiconductors, Vilnius, Lithuania, September 5-7, 1995. - Semiconductor Physics Institute, pp.80-81, 1995.
[14] A.Matulionis, P.Sakalas, T.Smertina, V.Aninkevièius, J.Liberis, V.Bareikis, "Effect of doping on hot electron noise and diffusion in gallium arsenide", Annual Reports 1992, Semiconductor Physics Institute. - Vilnius, pp.39-42, 1993.
[13] V.Aninkevièius, V.Bareikis, R.Katilius, J.Liberis, T.Lideikis, A.Matulionis, P.Sakalas, G.Treideris, "2DEG-2DEG transfer noise in d-doped GaAs", Annual Reports 1991, Semiconductor Physics Institute. - Vilnius, pp .45-47, 1992.
[12] P.Sakalas, V.Bareikis, J.Liberis, A.Matulionis, "Hydrogenization of GaAs and hot electron noise", Proceedings of the 6th Scientific Conference on Fluctuation Phenomena in Physical Systems, September 23-27, 1991, Palanga, Lithuania / Ed. V.Palenskis. - Vilnius University Press., pp.30-31, 1991.
[11] V.Bareikis, V.Aninkevièius, J.Liberis, T.Lideikis, A.Matulionis, P.Sakalas, G.Treideris, R.Katilius, "Hot electron noise in GaAs epilayer and heterojunction structures", Proceedings of International Semiconductor Device Research Symposium, Charlottesville, USA, December 4-6, 1991. - University of Virginia, Charlottesville, pp.469-472, 1991.
[10] V.Bareikis, R.Katilius, J.Liberis, A.Matulionis, R.Miliusyte, P.Sakalas, "Hot electron noise - technique to study energy levels", ,Annual Reports 1990, Semiconductor Physics Institute, Lithuanian Academy of Sciences, - Vilnius, pp. 6-8, 1991.
[9] V.Bareikis, J.Liberis, A.Matulionis, R.Miliusyte, J.Pozela, P.Sakalas, "Impurity resonant scattering of hot electrons in GaAs ", Proceedings of the 20th International Conference on the Physics of Semiconductors, 6-10 August, 1990, Thessaloniki, Greece / Eds. E.M. Anastassakis, J.D.Joannopoulos. - Singapore: World Scientific, pp.2479-2482, 1990.
[8] V.Bareikis, J.Liberis, R.Katilius, A.Matulionis, R.Miliusyte, P.Sakalas, "Length dependent noise and diffusivity of hot electrons in GaAs and InP", Annual Reports 1989, Semiconductor Physics Institute, Lithuanian Academy of Sciences, Vilnius, pp.28-31, 1990.
[7] V.Bareikis, J.Liberis, A.Matulionis, R.Miliusyte, P.Sakalas, "Long-range fluctuations of hot electrons in GaAs and InP at 80 K", Proceedings of the 10th International Conference on Noise in Physical Systems Including 1/f Noise, Biological Systems and Membranes, Budapest, Hungary, August 21-25, 1989. / Ed. A.Ambrozy / Akademiai Kiado, Budapest, pp.53-56, 1990.
[6] V.Bareikis, J.Liberis, A.Matulionis, R.Miliusyte, P.Sakalas, "Long-range fluctuations of hot electrons in GaAs and InP at 80 K", Abstracts of 10th International Conference on Noise in Physical Systems (Including 1/f Noise, Biological Systems and Membranes) Budapest, Hungary, August 21-25, 1989, pp.31-33, 1989.
[5] V.Bareikis, J.Liberis, A.Matulionis, R.Miliusyte, J.Pozela, P.Sakalas, "Length dependent hot electron noise in doped GaAs", Proceedings of the Sixth International Conference on Hot Carriers in Semiconductors, Scottsdale, Arizona, USA., 23-28 July 1989 / Eds. D.K.Ferry, L.A.Akers. - Special Issue: Solid?State Electronics, T.32, No.12, pp.1647?1650, 1989.
[4] V.Bareikis, J.Liberis, A.Matulionis, R.Miliusyte, J.Pozela, P.Sakalas, "Size dependent diffusion and microwave noise in GaAs and InP", Proceedings of the 19th International Conference on the Physics of Semiconductors, Warsaw, August 15-19, 1988 / Ed. W.Zawadski, Warsaw: Inst. of Physics PAN, pp. 1427-1430, 1988.
[3] V.Bareikis, J.Liberis, A.Matulionis, R.Miliusyte, P.Sakalas, "Noise and diffusivity of hot electrons in GaAs and InP at 80 K", Abstracts of Ninth International Conference on Noise in Physical Systems, Montréal, Québec, Canada, May 25-29, 1987, P.3, 1987.
[2] V.Bareikis, K.Kibickas, J.Liberis, R.Miliusyte, P.Sakalas, "Noise in short n+-n-n+ GaAs diodes", Proceedings of the 8th International Conference on Noise in Physical Systems and 1/f-Noise, Rome, September 9-13, 1985 / Eds. A.D’Amico and P.Mazzetti. - Elsevier Science Publishers B.V.: North-Holland, Amsterdam, pp.203-206, 1986.
[1] V.Bareikis, K.Kibickas, J.Liberis, A.Matulionis, R.Miliusyte, J.Parseliûnas, J.Pozela, P.Sakalas "Velocity overshoot and suppression of diffusivity and microwave noise in short n+-n-n+ structures of GaAs" Proceedings of the International Conference on High-Speed Electronics, Stockholm, Sweden, August 7-9, 1986. / Eds. B.Källbäck and H.Beneking. - Springer, Berlin, pp.28-31, 1986.



L.Hofmann
17 April 2017