Parameter Determination

Device characterization and model parameter extraction are crucial steps for achieving the desired model accuracy.

All model parameters can be extracted in a step-by-step procedure keeping a physical understanding with the associated model equations. Extraction strategies can be found in HICUM Documentations from our Documentation section. Note that there is no one-hat-fits-all procedure for parameter extraction. Also, for geometry-scalable compact models, generally more than a single transistor and, preferably, other types of test structures and their corresponding data should be available for achieving accurate models.

The HICUM group has set up a state-of-the-art measurement laboratory with equipment for the characterization of advanced transistor technologies. The group operates systems for DC, AC, Noise and Load-Pull measurements. The HICUM model is constantly verified with device measurements obtained from experimental data. Regular model releases to the Si2/CMC are accompanied with a large set of test data (see Model Testing section.)