Introduction

WELCOME to the official webpage of HICUM development related activities. HICUM stands for HIgh CUrrent Model and is a physics-based geometry-scalable compact model for homo- and heterojunction bipolar transistors. It targets the design of circuits using Si, SiGe or III-V based processes and is particularly accurate at high-frequencies and high-current densities. HICUM is is being maintained by the HICUM Group at CEDIC, University of Technology Dresden, Germany. Feedback of model users is greatly appreciated.

A quick overview along with the HICUM equations, and its parameter list provide a general description of the model. Most recent updates are systematically arranged in the Documentation section. Information on older model versions may be found for the years: 2002 , 2001 and 2000.

HICUM has been selected by the Compact Modeling Council (CMC) as one of the standard bipolar transistor compact models for the industry. The model in its levels HICUM/L2 and HICUM/L0 is available in all mainstream commercial circuit simulators. For more comprehensive information, see the respective vendor websites.

For more information on the model levels, please see the Documentation section.