WELCOME to the official webpage of all HICUM related activities. HICUM stands for HIgh CUrrent Model and targets
the design of bipolar transistor circuits at high-frequencies and high-current densities using Si, SiGe or III-V based
processes. HICUM is being developed and maintained by the HICUM Group
at CEDIC, University of Technology Dresden,
Germany, and the University of California at San Diego, USA. Feedback of the co-operation partners are also greatly
quick overview along with the
HICUM equations, and its parameter list
provide a general description of the
model. Most recent updates are systematically arranged in the Documentation section. Older information may
be found for the years: 2002
HICUM has been selected by the Compact Modeling Council (CMC) as one of the standard bipolar transistor compact
models for the industry. HICUM is available in all mainstream commercial circuit simulators. For more comprehensive
simulator-availability and the respective vendor websites.
Presently three hierarchy (levels) of HICUM models (e.g., Level0, Level2 and Level4) exist differing by model
complexity and each targetting a different design purpose. For more information on the model levels, please see
the Documentation section.
Note that HICUM Level4, which can be easily generated by TRADICA, is not publicly
available and supported by our group.