User contributions

• 0-a "Workshop participant’s locations"; M. Schröter; Cedic, TU Dresden (pdf-File)
• 0-b "ATMEL - Corporate Overview" (ppt-File)
• I-a "HICUM/L2 - Productization and Release Update"; A. Chakravorty, M. Schröter; Cedic, TU Dresden (pdf-File)
• I-b "Correlated Noise Modeling - An Implementation into HICUM"; A. Chakravorty, M. Schröter, P. Sakalas, J. Herricht; Cedic, TU Dresden (pdf-File)
• I-c "New Models into SPICE"; J. C. Perraud; ENSICAEN (pdf-File)
• I-d "HICUM Status in Eldo/EldoRF"; M. Selim: Mentor Graphics (pdf-File)

• II-a "Experience using the XMOD Hicum Master Toolkit HMT"; J. Berkner; Infineon Technolgies (pdf-File)
• II-b "Practical Scalable and Statistical Modeling of SiGe HBT's"; B. Ardouin, R. Scholz, G: Fischer, D. Knoll; XMOD Technologies, IHP (pdf-File)
• II-c "Extraction of Scalable HiCuM Parameters and Verifikation for Advanced SiGeHBTs"; R. M. Malladi, K. M. Newton, M. Schröter, V. Borich, S. L.Sweeney, J. Rascoe, S. Venkatadri, J.Yang, S. Chen; IBM, University of California, Agilent Technologies

• III-a "PCM -and Physics-Based Statistical BJT Modeling Using HICUM and TRADICA"; W.Kraus; ATMEL (pdf-File)
• III-b "Monte Carlo Simulation in Statistical Design Kit"; ATMEL (ppt-File)
• III-c "Non-standard geometry scaling effects" ; S. Lehmann, M. Schröter, J. Krause, A. Pawlak; Cedic, TU Dresden (pdf-File)
• III-d "A Self Consistent Joint Extraction of t₀ and RCX for HICUM"; Z. Huszka; austriamicrosystems AG (ppt-File)
• III-e "Device sizing and design optimization"; K.E. Moebus, M. Schröter; Cedic, TU Dresden (pdf-File)

• IV-a "HICUM/Level0 - Update"; A. Chakravorty, S. Lehmann, M. Schröter; Cedic, TU Dresden (pdf-File)
• IV-b "About Modeling the Reverse Early Effect in HICUM Level 0"; D. Céli; STMicroelectronics (pdf-File)
• IV-c "Advantages of using TRADICA in design framework"; M. Schröter; Cedic, TU Dresden (pdf-File)

• V-a "Regional Approach Methods for SiGe HBT compact modeling"; M. Schröter, H. Tran; Cedic, TU Dresden (pdf-File)
• V-b "Computing transit time components from a regional analysis: A practical implementation"; N. Kauffmann; STMicroelectronics (ppt-File)
• V-c "Improved methodology for modeling the Parasitic Substrate PNP without access to the substrate terminal"; F. Pourchon, D. Céli and C. Raya; STMicroelectronics (pdf-File)

Lutz Hofmann
hofmann@iee.et.tu-dresden.de