Presentations

• "Introduction":  T. Zimmer, University of Bordeaux, France

  Session 1

• "Advances in SiGe BiCMOS Technology for mm-Wave Applications in the DOTSEVEN Project":  K. Aufinger, Infineon, Germany
• "55nm SiGeBiCMOSfor Optical, Wireless and High-Performance Analog Applications":  P. Chevalier, STMicroelectronics, France
• "Optimization of Vertical Doping Profiles for High-Speed SiGe HBTs":  H. Rücker, IHP, Germany

  Session 2

• "Impact of physical effects and compact modeling on mm-wave circuit performance":  A. Pawlak, Dresden University of Technology, Germany
• "Challenges in Modeling, Design, and Characterization of Terahertz Circuits in Silicon":  U. Pfeiffer, University of Wuppertal, Germany

  Session 3

• "From Adaptive Modulation Schemes towards Software Defined Radar":  A. Stelzer, Johannes Kepler University Linz, Austria
• "Concepts for Highly Integrated Automotive Radar Circuits":  H. Jäger, Infineon - DICE GmbH & Co KG, Austria;
  M. Porranzl, Johannes Kepler University Linz

  Session 4

• "Beyond 10 Gbit/s mm-Wave Wireless Communication using SiGe BiCMOS Transceivers":  E. Öjefors, SiversIMA, Sweden
• "Application challenges and potential solutions for robust radar sensors":  D. Steinbuch, Bosch, Germany